How to use MOSFET DRIVER IR2110. Compete circuit diagrams of H bridge are shown below. I have used IR2210 MOSFET gate driver circuit. In H bridge Two MOSFETS are used as High side MOSFETS and two used as a low side MOSFETS. IR2210 high and low side drivers outputs are used to drive these MOSFET.

Part Number : IR2110, IR2113

Function : High and Low Side Driver

Package : DIP 14 Pin type

Manufacturers : International Rectifier, infineon

Image :

Description :

The IR2110 / IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts.

Pinout

Features

1. Floating channel designed for bootstrap operation Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune

2. Gate drive supply range from 10 to 20V

3. Undervoltage lockout for both channels

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4. 3.3V logic compatible Separate logic supply range from 3.3V to 20V Logic and power ground ±5V offset

5. CMOS Schmitt-triggered inputs with pull-down

6. Cycle by cycle edge-triggered shutdown logic

7. Matched propagation delay for both channels

8. Outputs in phase with inputs

Reference Site

IR2110 Datasheet

Other data sheets within the file : 2101, IR2101, IR2101S, IR2101SPBF, IR2110

Related articles across the web

The IR2110 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. Theoutput drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts. Features • Floating channel designed for bootstrap operation Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V • Undervoltage lockout for both channels • 3.3V logic compatible Separate logic supply range from 3.3V to 20V Logic and power ground ±5V offset • CMOS Schmitt-triggered inputs with pull-down • Cycle by cycle edge-triggered shutdown logic • Matched propagation delay for both channels • Outputs in phase with inputs • Also available LEAD-FREE.

Ir2110 Mosfet Drivers For Mac

In many applications, floating circuit is required to drive high side MOSFET. In H bridge used in pure sine wave inverter design 2 MOSFET are used as high side MOSFET and 2 MOSFET are usesd as low side MOSFET. International rectifiers IR2110 MOSFET driver can be used as high side and low side MOSFET driver. Hi, I'm currently working on single phase using 2 IR 2110 drivers and 4 IGBT (IRGB4615D). My full bridge design is shown in the attachment below.

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